1Wijewarnasuriya P S, Zandian M, Yong D B, et al. Microscopic Defects on MBE Grown LWIR Hg1-xCdxTe Material and their Impact on Device Performance[J]. J.Electron.Mater, 1999, 28(6): 649-654.
2Wenbin Sang, Ju Jianhua, Shi Weiming, et al. Comparison of physical passivation of Hg1-xCdxTe[J]. J.Ccystal Growth, 2000, 214/215: 265-268.
3Paul F Fewster. X-ray Scattering from Semiconductors[M]. London: Imperial College Press, 2000,243-276.
4White J K, Antoszewski, Pal R, et al. Passivation effect on reactive-lon-etch-formed n-on-p Junctions in HgCdTe. [J]J.Electron.Mater, 2002, 31(7): 743-748.
5Chen M C, List R S, Chandra D, et al. Key performace-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes[J]. J.Electron.Mater, 1996, 25(8): 1375-1382.