Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography
Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography
摘要
The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.
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