摘要
Nano-scaled Ti-B-N coatings could be produced by inductively coupled plasma (ICP) assisted magnetron spurtering. The properties and microstructure of the coating can be changed drastically by applying ICP to conventional magnetron sputtering. In this work, an internal type rf ICP process is used. The core of this technology is the efficient production and control of self-depositing ions and reactive gas ions by an induced electric field. Ti-B-N coatings were prepared by using a TiB2 target and a gas mixture of N2 and Ar at 200 ℃ and a pressure of 60 mTorr. In addition to ICP, the effect of the substrate bias voltage on the structure and properties of the coating was investigated. By applying ICP and a bias voltage to the substrate the hardness of the Ti-B-N coating is increased by more than 75 GPa, as a result of enhanced ionization in the plasma. The Ti-B-N coating, which has the highest hardness, shows the best surface uniformity and a very dense structure with a grain size of 3 nm. This sample also shows a high crystallinity compared to the coating prepared using other deposition parameters.
