微电子科学技术在材料物理方面的一些最新发展进程

Some new development of microelectronics in the material physics

在微电子学的发展历程中,集成电路(IC)的发明是最具里程碑意义的创新之一。几十年来,IC 始终保持着空前的增长率。目前超大规模集成电路(ULSI)的特征尺寸缩至深亚微米,将在材料、技术以及基 本物理规律等诸多方面面临"巨大的挑战"。微电子技术的发展从依靠缩小硅基芯片上元器件的特征尺寸来 增加集成度的一维方式演变成向多维发展的模式。文章对深亚微米各技术时代ULSI的发展历程中所遇到 的一些材料、技术物理问题以及研究成果进行综述评论,跟踪微电子技术的发展进程。微电子技术已逼近微 电子器件的物理极限,并将逐步发展到它的下一代一纳米电子器件,人类对物质世界的认识也将提高到一个 新阶段。

Integrated Circuit (IC) is one of the most influential inventions in the development of microelectronics. The ratio of IC throughout keeps unprecedented growth in some ten years. As the characteristic dimensions of ULSI reaches below 100nm,microelectronics will face giant challenges regarding material and technology. Development of microelectronics is from a dimensional fashion with shrinking size of the devices on Si-substract but increasing integration to a multi-dimensional fashion. In this paper, the problems and research that technology physics faces during the development of ULSI in the technology times of sub -micron are summarized, the development of microelectronics are followed. Microelectronics approaches the physical limit of microelectronic devices. It is gradually going to next stage-nanoelectronic devices. Man's knowledge of nature is coming to a new age.