摘要
在建立 SOI MOSFET阈值电压模型的基础上 ,对其阈值电压特性进行了研究 ,分析了阈值电压与硅膜掺杂浓度、前栅、背栅氧化层厚度。
On the basis of the establishment of the model of the threshold voltage for deep sub-micron SOI MOSFET, a study of the threshold voltage characteristics is made, and an analysis of the effect of the silicon film doping concentration and thickness, the thickness of the front and back gate oxide, the temperature on the threshold voltage is performed.
出处
《广西大学学报（自然科学版）》
CAS
CSCD
2004年第z1期63-65,68,共4页
Journal of Guangxi University（Natural Science Edition）
基金
广西自然科学基金 (桂科自 0 3 3 90 1 4)资助
