硅基垂直腔面光发射器件的设计与实现

Design and Fabrication of Si-based Vertical Cavity Surface Light Emitting Device

提出了一种新型硅基垂直腔面光发射器件结构。它采用等离子增强化学气相淀积(PECVD)方法制备的非晶硅/二氧化硅交替生长的多层薄膜结构为布拉格反射器(DBR),以夹在上下两个布拉格反射器之间的非晶碳化硅薄膜为中间发光层。通过设计与模拟,分析了DBR中薄膜生长顺序与层数对器件性能的影响。根据设计制作了光致红光发射器件并测量分析了它的光致发光谱。

A novel Si|based vertical cavity surface light emitting device is proposed. a|Si/a|SiO_2 is fabricated periodically by PECVD as the distributed Bragg reflectors (DBR), while a |Sic:H thin film is fabricated between the bottom DBR and the top DBR by PECVD as the light emitting layer. The order of thin films of DBR is analyzed and determined by design and simulation. The photo|luminescent red light emitting device is fabricated, and its luminescence spectra is measured and analyzed.