一种用于RF技术的厚绝缘层上的铜电感

Copper Inductor on Thick Insulating Layer for RF Techniques

提出了一种基于氧化多孔硅厚膜隔离技术的Cu电感。厚膜隔离层降低了电感的衬底损耗,提高了电感的Q值。实验中通过多孔硅氧化和电镀Cu制备了电感样品。微波测试显示,电感在2.8GHz的频率下Q值达到了4.5,电感值约为5nH,电感的自谐振频率为9GHz。

A copper inductor based on oxidized porous silicon(OPS)insulating technology is presented.With thick insulating layer the silicon substrate loss has been greatly reduced.Inductors are fabricated by the oxidization of porous silicon and the electroplating of copper.Microwave measurement shows that the Q factor of the inductor reaches 4.5 at 2.8 GHz and the inductance is about 5 nH and the resonate frequency is 9GHz.