掺杂对富—锆Pb(Zr_xTi_(1-x))O_3薄膜性能的影响

The Effect of Dope on the Properties of Zr-rich Pb(Zr_xTi_(1-x))O_3 Thin Film

采用脉冲激光溅射方法将PZT/YBCO沉积在LaAlO3(LAO)基底上,所选择的烧结靶材分别是不掺杂的Pb(Zr0.94Ti0.06)O3和掺有2%Bi2O3的Pb(Zr0.94Ti0.06)O3。沉积这两种薄膜时所选择的工艺参数均相同。通过X射线衍射分析比较了两种薄膜的结晶状态,利用P-V曲线比较了两种薄膜的电学性质,并测量出这两种薄膜的介电常数与频率(ε-f)以及介电损耗与频率(tanδ-f)的关系曲线。

It has grown PZT/YBCO structure on LAO substrate using pulsed laser deposition (PLD).The sintered targets are Pb(Zr_~0.94 Ti_~0.06 )O_3 and Pb(Zr_~0.94 Ti_~0.06 )O_3 doped with 2% Bi_2O_3.The crystal state of the films is examined by X-ray diffraction(XRD).The polarization-versus-voltage(P-V)loop is employed to compare the electrical properties of the two PZT films.It also investigates dielectric constant-versus-frequency(ε-f)and dielectric loss-versus-frequency(tanδ-f)curves of the two films.