Dy_2O_3掺杂对(Ba,Sr)TiO_3基高压电容器陶瓷性能的影响

The Influence of Dy_2O_3 Doping on the Dielectric Properties of (Ba,Sr)TiO_3 Series Capacitor Ceramics with High Voltage

研究了(Ba,Sr)TiO_3基电容器陶瓷中掺杂稀土氧化物Dy_2O_3对材料介电性能的影响,得到了Dy_2O_3影响其性能的规律,即随着Dy_2O_3加入量的增加材料的介电常数开始增大随后减少,当W(Dy_2O_3)=0.5%时介电常数最大,而介质损耗逐渐减少。得到了介电常数为5245,介质损耗为0.0026,耐压为5.5kV/mm的高压低损耗陶瓷电容器瓷料。探讨了Dy_2O_3掺杂改性的机理。这些结果为Dy_2O_3掺杂改性电容器陶瓷提供依据。

The effects of Dy_2O_3 doping on the dielectric properties of (Ba,Sr)TiO_3 series capacitor ceramics were studied, and the law of the influence on the BST series capacitor ceramics has been obtained, i.e.with the increasing of Dy_2O_3 additive, the dielectric constant(ε) of materials starts increasing and then decreasing while the dielectric losses (tan δ) decreasing and the dielectric constant(ε) is maximum while W(Dy_2O_3)=0.5%.The BST ceramics with optimum comprehensive properties have been obtained, having high ε (=5245),low tan δ (=0.0026) and high DC breakdown voltage (=5.5MV/m).The influencing mechanism of Dy_2O_3 on the dielectric properties of (Ba, Sr)TiO_3 ceramics is studied, thus providing the basis for preparation of capacitor ceramics.