摘要
利用射频 (RF) 共溅射的方法在n-Si(111)衬底上,以SiO_2为主靶,上面放置不同数量的Si片和石墨片,沉积出掺杂氧化物SiC复合薄膜,随后在不同温度下进行退火处理,并研究了其光致发光谱和光激发谱。不同C含量的样品在450nm和580nm附近均得到不同强度的发光峰,主要来自于Si、C注入后引起的基质成键变化而带来的氧空位缺陷和Si晶粒,对于C含量较高的样品在580nm处观察到黄光发射与C团簇有关。利用FTIR和XRD表征了复合膜的结构,UV—VIS分光光度计表征了复合膜的透射吸收特征。
Silicon based composite films on monocrystalline Si substrates were prepared by radio frequency (RF) co-sputtering using a SiO_2 target on which were placed chips of Si or C, followed by thermal annealing treatment at the range of 500 to 1 100℃ for 30 min in a N_2 atmosphere. Visible photoluminescence (PL) from these SiC-SiO_2 composite films has been observed at room temperature, with peak wavelength in the range from 430 to 580 nm, excited by 325 nm. The blue luminescence is considered to originate from d...
