摘要
栅氧击穿不仅和栅氧质量相关,而且受前工序的影响很大。本文介绍了影响栅氧击穿的 因素,如PBL隔离和腐蚀、电容结构。
Gate oxide breakdown not only depend on oxide quality but also pre-process.This paper introduce some factor which effect gate oxide breakdown such as PBL isolation and etch,capacitor structure.
出处
《电子与封装》
2003年第3期32-35,共4页
Electronics & Packaging
