摘要
提出了两款基于指数型曲线补偿技术的、采用1.5μmBiCMOS工艺制造的新型带隙电压基准(BGR).在-45~85°C它们的平均温度系数均约为8.0×10-6/°C;在电源电压5V情况下工作时功耗分别为154.2μW和207.5μW.低功耗、高精度的特性使得它们非常适合集成于混合信号IC中.
Two bandgap references based on the exponential curvature compensation technique were discussed. They can be fabricated using 1.5 μm BiCMOS process. Their average temperature coefficients are measured as 8.0×10-6/°C over the commercial (-45~80°C) temperature range. The power consumption is only 154.2 μW and 207.5 μW with 5 V single power supply. Due to the characteristics of low powerconsumption and high precision, they are very suitable for mixedsignal ICs.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
2003年第z1期147-151,共5页
Journal of Shanghai Jiaotong University
关键词
带隙电压基准
温度系数
片上电压基准
指数型曲线补偿
bandgap reference
temperature coefficients
on-chip voltage reference
exponential curvature compensation