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适用于混合信号IC中的带隙电压基准 被引量:1

Bandgap References Used in Mixed-Signal ICs
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摘要 提出了两款基于指数型曲线补偿技术的、采用1.5μmBiCMOS工艺制造的新型带隙电压基准(BGR).在-45~85°C它们的平均温度系数均约为8.0×10-6/°C;在电源电压5V情况下工作时功耗分别为154.2μW和207.5μW.低功耗、高精度的特性使得它们非常适合集成于混合信号IC中. Two bandgap references based on the exponential curvature compensation technique were discussed. They can be fabricated using 1.5 μm BiCMOS process. Their average temperature coefficients are measured as 8.0×10-6/°C over the commercial (-45~80°C) temperature range. The power consumption is only 154.2 μW and 207.5 μW with 5 V single power supply. Due to the characteristics of low powerconsumption and high precision, they are very suitable for mixedsignal ICs.
出处 《上海交通大学学报》 EI CAS CSCD 北大核心 2003年第z1期147-151,共5页 Journal of Shanghai Jiaotong University
关键词 带隙电压基准 温度系数 片上电压基准 指数型曲线补偿 bandgap reference temperature coefficients on-chip voltage reference exponential curvature compensation
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参考文献6

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同被引文献3

  • 1Gunawan M,Meijer G C M,Fonderie J,et al.A curvature-corrected low-voltage bandgap reference[J].IEEE Journal of Solid-State Circuits,1993,28(9):667-670.
  • 2Lee I,Kim G,Kim W.Exponential curvature-compensated BiCMOS bandgap references[J].IEEE Journal of Solid-State Circuits,1994,29(11):1 396-1 403.
  • 3Leung K,Mok P.A Sub-1-V 15-ppm/oC CMOS bandgap voltage reference without requiring low threshold voltage device[J].IEEE J Solid-State Circuits,2002,37(3):526-530.

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