非晶硅TFT室温红外探测器的光学特性研究

Study on Optical Properties of Amorphous Silicon TFT-Based Uncooled Infrared Detectors

针对非晶硅薄膜晶体管室温红外探测器的实际结构,提出了两种计算红外吸收率的数学模型,并结合光学导纳矩阵法研究了它的光学特性。对钝化层的结构和材料进行了优化设计,并用在了实际阵列的制作中。

In this paper the practical structure of amorphous silicon thin film transistor-based uncooled infrared detector is considered,two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of optical admittance matrix method. The optimized structure and material of the passivation film are achieved in our calculating,and these results are utilized in the practical fabrication of the de- tectors.