脉冲激光溅射及富—锆PZT薄膜的性能研究

Research on Pulsed Laser Deposition and Properties of Zr-rich PZT Thin Film

采用脉冲激光溅射方法将PZT/YBCO沉积在LaAlO_3(LAO)基底上,所选择的烧结靶材是Pb(Zr_(0.94)Ti_(0.06)O_3+2％Bi_2O_3。沉积YBCO和PZT薄膜的基底温度分别为710℃和570℃。整体结构PZT/YBCO/LAO在600℃的基底温度下退火15min。本文通过X射线衍射分析观察了薄膜的结晶状态,利用P—V曲线估计PZT薄膜的电学性质,并测显出薄膜的介电常数与频率(ε—f)以及介电损耗与频率(tanδ—f)的关系曲线。

We have grown PZT/YBCO structure on LAO substrate using pulsed laser deposition (PLD). The sintered target we choose is Pb(Zr_(0.94) Ti_(0.06)O_3+2%Bi_2O_3. YBCO and PZT thin films are prepared under the sub- strate temperature 710℃ and 570℃ respectively. The whole system PZT/YBCO/LAO is annealed at 600℃ for 15min. Subsequently, the crystal structure of the films is examined by X-ray diffraction (XRD). The polariza- tion-versus-voltage (P-V) loop is employed to evaluate the electrical properties of the PZT layer. We also investi- gate dielectric constant-versus-frequency(ε-f) and dielectric loss-versus-frequency (tanδ-f) curves.