摘要
崭新的碳化硅(SiC)肖特基二极管优于它的竞争者,具有600V的阻断电压;而且没有反向恢复电荷和反向恢复电流。
New SiC Schottky diodes outperform their counterparts, exhibiting up to 600V blocking voltage with the absence of reverse recovery charge and current.
出处
《电力电子》
2003年第Z1期55-57,77,共4页
Power Electronics
