大功率砷化镓(GaAs)、碳化硅(SiC)器件在电源中的应用

GaAs and SiC Power Components for High End Power Supplies

随着半导体工业的发展,现在已经可以生产用砷化镓或碳化硅材料为基片的新型大功率肖特基二极管。这篇论文描述了两个方面的内容,主要是了解这些器件的工作特性。当替换常规器件时应该考虑到它的工作特性不同于双极型硅二极管。其更显突出的动态特性会使寄生现象对工作行为的影响加大,因此要考虑封装和所引起的二次效应。这些效应要参考典型砷化镓、碳化硅二极管的实际工况,随着技术的发展,这些器件将会有更美好的前景。

Progress in semiconductor technology now permits to produce new power schottky diodes based on gallium arsenide (GaAs) or silicon carbide (SiC) material. This paper describes two particular aspects which are essential to understand operational behaviour of those devices: Their switching characteristics differ from silicon bipolar diodes , which should be taken into account when replacing conventional devices. The superior dynamic characteristics make the influence of parasitics on operational behaviour incr...