低应变SiGe/Si异质结构的应变弛豫与界面扩散

A Study on Strain relaxation of Low Strained SiGe/Si Heterostructure and Diffusion in the Interface

利用透射电子显微镜(TEM)和同步辐射X射线白光形貌术研究了低应变SiGe/Si异质结构应变弛豫和界面扩散。观察到SiGe外延层未发生应变弛豫,Si缓冲区和Si衬底中有颗粒状析出物。

Strain relaxation of low strained SiGe/Si heterostructure and diffusion in the interface between SiGe layer and Si substrate were investigated by transmission electron microscope (TEM) and synchrotron radiation x-ray white-beam topography. No strain relaxation was observed in epitaxial SiGe layer. Particle-like precipitate was found in the Si buffer layer and Si substrate.