摘要
An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.
An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2003年第S1期451-452,共2页
Acta Optica Sinica
基金
This work was supported by the major state basic research program under grant No. G2000036606.
