摘要
Technologies are described for integrating multiple bandgaps and photonic crystal structures monolithically in a semiconductor chip. Practical devices examples include high power 980 nm pumps, 2×2 crosspoint switches and lasers modelocked at THz frequencies.
Technologies are described for integrating multiple bandgaps and photonic crystal structures monolithically in a semiconductor chip. Practical devices examples include high power 980 nm pumps, 2×2 crosspoint switches and lasers modelocked at THz frequencies.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2003年第S1期443-444,共2页
Acta Optica Sinica
