摘要
A novel gain measurement technique based on the integration of the measured amplified spontaneous emission spectrum multiplying a phase function over one longitudinal mode interval is proposed for Fabry-Perot semiconductor lasers.
A novel gain measurement technique based on the integration of the measured amplified spontaneous emission spectrum multiplying a phase function over one longitudinal mode interval is proposed for Fabry-Perot semiconductor lasers.
作者
Wei-Hua Guo, Qiao-Yin Lu, Yong-Zhen Huang, Chun-Lin Han, Li-Juan Yu State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China, Tel: 010-82304524, E-mail: gwh@redsemi.ac.cn
出处
《光学学报》
EI
CAS
CSCD
北大核心
2003年第S1期331-332,共2页
Acta Optica Sinica
基金
This work was supported by the National Nature Science Foundation of China under grants No. 60225011
major state basic research program under grant No. G2000036606.
