1.3 μm InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources

1.3 μm InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources

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摘要 We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/GaAs system, our SQW lasers of 1.3μm range is among the best in terms of transparency and threshold current density. We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/GaAs system, our SQW lasers of 1.3μm range is among the best in terms of transparency and threshold current density.

作者 Gray Lin C. M. Lu C. H. Chiou I. F. Chen T. D. Lee J. Y. Chi D.A. Livshits

机构地区 Industrial Technology Research Institute

出处《光学学报》 EI CAS CSCD 北大核心 2003年第S1期325-326,共2页 Acta Optica Sinica

关键词 GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources in as have MOCVD m InGaAsN by

分类号 O432.12 [机械工程—光学工程]

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1.3 μm InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources

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