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A Comparative Study of Epi-up and Epi-Down Bonding of High Power 980 nm Single-Mode Semiconductor Lasers

A Comparative Study of Epi-up and Epi-Down Bonding of High Power 980 nm Single-Mode Semiconductor Lasers
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摘要 Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated that epi-down bonding can offer lower thermal resistance and improved optical performances without significantly degrading the long-term laser reliability. Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated that epi-down bonding can offer lower thermal resistance and improved optical performances without significantly degrading the long-term laser reliability.
机构地区 Corning Inc.
出处 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期319-320,共2页 Acta Optica Sinica
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