摘要
We have demonstrated polarization insensitive AWGs by controlling the doping concentration of Boron in overcladding and the etching depth of waveguide. The proposed method uses the conventional fabrication process and does not degrade optical properties and reliability characteristics.
We have demonstrated polarization insensitive AWGs by controlling the doping concentration of Boron in overcladding and the etching depth of waveguide. The proposed method uses the conventional fabrication process and does not degrade optical properties and reliability characteristics.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2003年第S1期287-288,共2页
Acta Optica Sinica
