摘要
Epitaxial monocrystalline silicon film was grown on the porous silicon using ultra high vacuum electron beam evaporation. Silicon on insulator(SOI) materials were successfully produced by bonding and etching the back of porous silicon. The quality of the SOI samples was investigated by using the cross sectional transmission electron microscopy (XTEM), spreading resistance profile (SRP), atomic force microscopy (AFM) and four crystal X ray diffraction (FCXRD). Experimental results show the SOI sample has good properties. Besides, the factors resulting in lattice strain of this SOI structure and the methods to reduce it are given.
Epitaxial monocrystalline silicon film was grown on the porous silicon using ultra high vacuum electron beam evaporation. Silicon on insulator(SOI) materials were successfully produced by bonding and etching the back of porous silicon. The quality of the SOI samples was investigated by using the cross sectional transmission electron microscopy (XTEM), spreading resistance profile (SRP), atomic force microscopy (AFM) and four crystal X ray diffraction (FCXRD). Experimental results show the SOI sample has good properties. Besides, the factors resulting in lattice strain of this SOI structure and the methods to reduce it are given.
作者
XIE Xin yun, LIU Wei li, AN Zheng hua, LIN Qing, SHEN Qin wo, ZHANG Miao, LIN Cheng lu (State Key Lab. of Functional Material and Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, CHN)
基金
SpecialFoundationforStateMajorBasicResearchProjects(No.G2 0 0 0 0 3 65 )
theNationalNaturalScienceFoundationofChina(No.90 1 0 1 0 1 2 )
