摘要
The a Si∶H/SiN x ∶H sample series are investigated by means of Raman scattering technique(RST). The result shows that due to the structural mismatch between a Si∶H and a SiN x ∶H, severe induced distortions are produced in the interface of the heterojunction, and these induced distortions tend towards a certain energy state. The ordering of the interface structure depends on the periodic number of multilayer thin films.
The a-Si : H/SiN_x : H sample series are investigated by means ofRaman scattering technique(RST). The result shows that due to thestructural mismatch between a- Si: H and a-SiN_x : H, severe induceddistortions are produced in the interface of the heterojunction, andthese induced distortions tend towards a certain energy state. Theordering of the interface structure depends on the periodic number ofmuhilayer thin films.
作者
CAO Guo rong 1, GUO Shen kang 1, WANG Zhi chao 2, LIU Yin chun 2, SUN Mei xiang 2 (1.Dept. of Phys., Jiangsu University, Zhenjiang 212003, CHN
2.Dept. of Phys., Nanjing University, Nanjing 210093, CHN)
