摘要
Porous silicon prepared by pulse electro-etching is heat-treatedin O_2 atmosphere with an enhancement of its PI. peak and animprovement of its PL stability. The PL peak of a sample poroussilicon treated in O_2 atmosphere at 1000 ℃ presents itself a three--peak structure and, compared with an un-- heat--treated sample,there exists blue shift of ～ 40 nm.
Porous silicon prepared by pulse electro etching is heat treated in O 2 atmosphere with an enhancement of its PL peak and an improvement of its PL stability. The PL peak of a sample porous silicon treated in O 2 atmosphere at 1 000 ℃ presents itself a three-peak structure and, compared with an un- heat-treated sample, there exists blue shift of ～ 40 nm.
基金
NaturalScienceFoundationofHunanProvinceEducationDepartment
China
