MOS器件中寄生双极型晶体管模型参数的提取

Extraction of Model Parameters for Parasitic Bipolar Transistors in MOS Devices

在晶体管 GP模型基础上 ,采用 Silvoca公司的 UTMOST模型参数提取程序 ,得到一种双极型晶体管模型参数的提取方法。用此方法对 PCM测试芯片的寄生三极管进行参数提取和模拟 ,模拟结果与测试结果符合得较好。

GP model of bipolar transistor is described A method for extracting model parameters of bipolar transistors is presented based on the UTMOST parameter extraction routine provided by Silvaco The method is applied to the parameter extraction of parasitic bipolar transistors in the PCM test chip The simulation result fits well with the test data