摘要
在半导体集成电路制造工艺中 ,超纯氢气是必不可少的重要工艺气体。特别是在硅外延工艺中 ,氢气对工艺质量起着决定性作用。因此 ,对氢气的指标要求比较苛刻 ,其纯度应大于99.9999% ,而且必须是大流量连续供应。文章主要从流体学和传热学两方面 ,系统地介绍了利用超低温吸附方法提纯大流量超纯氢气设备的关键设计技术。
In the manufacture of semiconductor IC's, the ultra pure hydrogen is an essential process gas, which is especially critical to the quality of epitaxy process In silicon epitaxy, the hydrogen should be 99 9999% pure, and it is required to be provided uninterruptedly in high flux With respect to hydromechanics and heat transfer, techniques critical to the design of a high flux hydrogen purification system for silicon epitaxy are dealt with
出处
《微电子学》
CAS
CSCD
北大核心
2002年第5期389-390,394,共3页
Microelectronics
关键词
硅外延
纯化系统
超纯氢气
雷诺准数
努塞尔特准数
Silicon epitaxy
Hydrogen purification system
Ultrapure hydrogen
Reynolds
Nusselt