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VLSI金属互连电迁移可靠性评估技术研究

Investigation into Technologies for Reliability Assessment of Electromigration Failure of VLSI Interconnections
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摘要 　在简要介绍电迁移失效机理的基础上,对各种电迁移可靠性实验评估方法的特点进行了分析对比,重点研究了VLSI金属互连电迁移可靠性的噪声评估技术。通过实验数据和结果的对比分析,证明噪声方法不仅可行,而且有着其他传统方法不可比拟的优越性,具有极好的应用前景。 Physical mechanism of electromigration is introduced, and various techniques for assessment of electromigration reliability are analyzed and compared in the paper. The noise assessment technology for the electromigration reliability of metal interconnections in VLSI's is dealt with in particular, which is shown to have many startling advantages, compared to traditional techniques.
作者 薛丽君 杜磊 庄奕琪 鲍立 李伟华 马中发
机构地区 西安电子科技大学技术物理学院
出处 《微电子学》 CAS CSCD 北大核心 2002年第6期412-415,共4页 Microelectronics
关键词 VLSI 金属互连 电迁移 可靠性评佶 噪声测试 VLSI Metal interconnection Electromigration Reliability assessment Noise measurement
分类号 TN47 [电子电信—微电子学与固体电子学] TN405.97 [电子电信—微电子学与固体电子学]
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参考文献11

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微电子学
2002年 第6期

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