期刊文献+

纳米结构的制备及其应用

Fabrication of the Nano-Structure and Its Applications
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摘要  介绍了用电子束光刻、反应离子刻蚀方法制备硅量子线、量子点的工艺方法;采用这种工艺在P型SIMOX(separationbyimplantedoxygen)硅片上成功地制造出一种单电子晶体管。 Technologies for preparation of Si quantum wire and dot based on EBL and RIE processes are reported in the paper Single electron transistor (SET) on ptype SIMOX substrates was fabricated based on these processes
作者 卢刚 毛胜春
出处 《微电子学》 CAS CSCD 北大核心 2002年第6期416-418,共3页 Microelectronics
基金 西安理工大学校长基金资助(No.210201)
关键词 纳米结构 单电子晶体管 量子线 量子点 Nano-structure Single electron transistor (SET) Quantum wire Quantum dot
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参考文献6

  • 1[1]Averin D V,Likharev K K. Possible applications of the single charge tunneling [A]. In:Grabert H,Devort M H ed. Single Charge Tunneling [C]. New York: Plenum, 1992.
  • 2[2]Yano K, Ishii T, Hashimoto T, et al. Rome-tempera ture single-electron memory [J]. IEEE Trans Elec Dev, 1994; 41(9): 1628-1637.
  • 3[3]Takashi Y, Namatsu H, Kurihara K, et al. Size de pendence of the characteristics of Si single-electron transistors on SIMOX substrates [J]. IEEE Trans Elec Dev, 1996; 43(8): 1213-1217.
  • 4[4]Leobandung E, Gao L, Wang Y, et al. Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K[J]. Appl Phys Lett, 1995; 67(7): 938-940.
  • 5[5]Augke R, Eberhardt W, Single C, et al. Doped silicon single electron transistors with single island char acteristics [J]. Appl Phys Lett, 2000; 76(15): 2065- 2067.
  • 6[6]Zheng L, Guo L, Chou Y. Silicon single-electron quantum-dot transistor switch operating at room temperature [J]. Appl Phys Lett, 1998; 72(8): 1205-1207.

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