Pt/Ti/Si三元固相反应生长PtSi过程的实验研究

An Experimental Study on Growth Process of PtSi/Si by Pt/Ti/Si Multilayer Solid-State Reaction

采用离子溅射方法在硅衬底上淀积Pt/Ti/Si多层结构,研究了不同退火温度(500°C和800°C)、相同退火时间(30min)固相反应形成PtSi薄膜的工艺。通过XRD、AES等测试方法,研究了原子的互扩散和反应过程。结果表明,在500°C退火时,由于Pt-Ti-O-Si过渡层的存在,使得Pt和Si反应不够充分,生成物中有部分Pt2Si存在,而800°C退火时,由于过渡层Ti与Si反应生成TiSi2,消耗了大量的Si,使得Pt与Si反应也不够充分。根据上述实验,给出了Pt/Ti/Si三元固相反应在不同退火温度下应采取的工艺条件。

A new method for growing PtSi film by solid state reaction of Pt/Ti/Si multilayer is described in the paper The variation of film structure with thermal annealing temperature was studied The film formed was characterized by Xray diffraction (XRD) and the auger electron spectroscopy (AES) measurements The results indicate that, when the film was annealed at 500 °C for 30 min, the dominant resultant between Si and Pt was PtSi, while a little Pt2Si was detected due to the existence of PtTiOSi transition layer; when the film was annealed at 800 °C for 30 min, Ti and Si can react with each other to produce TiSi2, which consumed a lot of Si atoms, leading to the incomplete reaction of Pt and Si In order to achieve the devicequalified PtSi film by Pt/Ti/Si multilayer solidstate reaction, the thickness of Ti layer, together with the annealing temperature and time, is critical