摘要
对LDD(轻掺杂漏)NMOS器件的热载流子退化特性进行了研究,发现LDDNMOS器件的退化呈现出新的特点。通过实验与模拟分析,得出了热载流子应力下LDDNMOS退化特性不同于常规(非LDD)NMOS的物理机制。并通过模拟对此观点进行了验证。
The hotcarrier degradation in LDD NMOSFET's was studied It was found that the hot carrier degradation in LDD NMOSFET's exhibited characteristics different from that of nonLDD NMOSFET's The physical mechanism related to the phenomena was proposed and validated through experiments and simulations
出处
《微电子学》
CAS
CSCD
北大核心
2002年第6期445-448,共4页
Microelectronics
关键词
轻掺杂漏
MOS器件
热载流子退化
界面态
Lightly doped drain (LDD)
MOSFET
Hot carrier degradation
Interface state