热激励硅谐振式压力传感器温度场的有限元计算

Simulations of Temperature Profile of Thermal Excited Silicon Resonant Pressure Sensor using FEM

针对一种典型的采用电阻热激励、压敏电阻拾振的压力微传感器的实际结构,利用有限元法系统地对其温度场进行了模拟计算。分析并得出了激励电阻在梁谐振子上位置、长度、宽度变化时;梁谐振子长度、宽度、厚度变化时;以及激、拾振电阻共同作用时,梁谐振子温度场的分布规律。

According to the practical sensing structure of a typical silicon resonant pressure micro sensor whose exciter is a thermal resistor and detector is piezoresistive unit, some simulations and calculations are carried out by using finite element model. The distribution laws of the temperature profile of the beam resonator are calculated and summarized under the following different conditions, such as the different location in the beam, length and width of the thermal exciting resistor, different length, width and thickness for the beam, and the comprehensive action of the exciting resistor and the detecting resistor.