PZT高频陶瓷表面金属化薄膜及其结构

Thin films by surface metallization of high-frequency PZT ceramic and its structure

采用磁控溅射与真空蒸发工艺相对比的方法 ,分析了不同金属化薄膜及其结构对薄膜与PZT陶瓷的结合力和器件高频电学性能的影响。实验表明 :Cu Ni+Ag薄膜可以改善陶瓷与金属的结合和减少反浸润发生 ,显著提高结合力 ,从而改善器件的电学性能。分析表明结合力是影响高频压电陶瓷电学性能的一个重要因素 ,实验得到了优化的金属化薄膜成分和结构 ,同时提出了相应的溅射工艺。

By comparing sputtering method with vaporization, varied structure of metallization thin films was studied. The result shows that the structure of metallization thin films like as Cu Ni+Ag can greatly promote adhesion between PZT ceramic and metal, decrease anti soakage between solder and metal, then improve device performance. The adhesion between Cu Ni thin film and ceramic has main influence on total adhesion and performance of device. The optimized structure was obtained. At the same time according sputter technology was also got.