摘要
This research has successfully developed an advance d manufacturing system for 300mm silicon wafer,using fixed abrasive instead o f conventional free slurry,to provide a totally integrated solution for achievi ng the surface roughness Ra<1 nm(Ry<5~6 nm) and the global flatness<O.2μm /300 mm.In addition to high throughput rate,this system significantly reduc es the total energy consumption by 70%,compared with the current process used for 200mm Si wafer.This paper describes the principle of material removal,st ate-of-the-art technologies and kinematical analysis for one-stop finishing o f 300mm Si wafer by fixed abrasive process.
This research has successfully developed an advance d manufacturing system for 300mm silicon wafer,using fixed abrasive instead o f conventional free slurry,to provide a totally integrated solution for achievi ng the surface roughness Ra<1 nm(Ry<5~6 nm) and the global flatness<O.2μm /300 mm.In addition to high throughput rate,this system significantly reduc es the total energy consumption by 70%,compared with the current process used for 200mm Si wafer.This paper describes the principle of materia...
出处
《厦门大学学报(自然科学版)》
CAS
CSCD
北大核心
2002年第S1期300-301,共2页
Journal of Xiamen University:Natural Science