摘要
介绍了绝缘栅双极型晶体管(IGBT)的物理特征及其基本结构,针对IGBT的输入、输出特性,建立了一种宏模型,并运用PSPICE软件对它进行了仿真,并与实际IGBT器件的相关特征数据进行了比较,结果表明,这种宏模型能够很好的模拟IGBT器件的静态和动态特性.
In this paper,the physical characte ristics of Insulate Gate Bipolar Tra nsistor(IGBT)are introduced.Aiming at the input and output charac teristics of IGBT,the micromodel of the IGBT has been constracted and computed by PSPICE.At the end,the re sult has been compared with the practical date and verified that this mi-cromodel is practical.
出处
《沈阳工业大学学报》
EI
CAS
2001年第S1期18-21,共4页
Journal of Shenyang University of Technology