摘要
作者研究了p型Al/6H -SiC肖特基二极管的基本制作工艺及其电学参数 .采用电流 -电压法 (I～V) ,测试了肖特基二极管的理想因子n和肖特基势垒高度b.对其基本电学参数n和b 的温度特性进行了研究 .分析了串联电阻对I～V特性的影响 .
The manufacturing processes and electrical parameters of p-type 6H-SiC Schottky diodes have been studied.The ideality factors n and barrier heights b of the Schottky diodes were measured with method of current-voltage( I～V ).Temperature characteristics of the ideality factor n and barrier height b were present.Analyses of the effects of the series resistance on I～V characteristics of the Schottky diodes were carried out.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2001年第S1期53-56,共4页
Journal of Sichuan University(Natural Science Edition)
