GaAsX射线探测器及其电子辐照改性的研究

STUDY OF INVESTIGATION ON INFLURNCE OF ELECTRON IRRADIATION ON GaAs X-RADIAL DETECTOR

研制出了 1种双微带结构的GaAsX射线探测器 ,该种探测器具有良好的探测性能 .通过对本征GaAs探测器和经过 1 6MeV电子辐照的探测器的X脉冲响应的测量 ,及对其响应时间、后沿下降时间和半高宽 (FWHM)的对比研究结果显示 ,经电子辐照后的探测器的性能得到了明显的改善 .

The properties of GaAs X-radial detector with double microstrip structure have been investigated.Having measured the response to X pulse of GaAs detector before and after 1 6MeV electronic radiation,the response time,fall time of trailing edge,full width of half maximun(FWHM)are researched and contrasted.The result of research shows that the properties of GaAs dector irradiated by electron has great improvement.