制备室温CdSe探测器的研究

The Study of CdSe Room Detector Fabracation

报道了用改进的垂直气相法 (多级提纯垂直气相法 )生长出尺寸达 1 0mm× 40mm富含Cd的CdSe单晶锭 ,电阻率为 1 0 5× 1 0 7Ω·cm ,陷阱俘获浓度为(1 45～ 2 1 8)× 1 0 8cm- 3.研究了室温探测器CdSe单晶的表面处理技术 ,初步摸索出了一套制备CdSe探测器的有效工艺 .

The CdSe sin gle crytals with excess Cd were grown by vertical vapor transation method,i.e.muti-step purification VUVGM.The resitivity and traping density of as grown crytals are 1 05×10 7Ω·cm and (1 45～2 18)×10 8cm -3 respectivly.The treatment of the surface of CdSe crystal was studied,and effecient process to fabrication CdSe detector is primarily set up which is a good basement for the application of CdSe sin gle crystal.