在GaN生长初期形貌发展的观察(英文)

Observation of Morphology Development in Initial Growth Stage of GaN

报道了对GaN在生长初期形貌发展的观察和形貌的高度分布演化。形貌观察发现GaN外延层由分离的岛转化为连续的膜 ,形貌的发展显示GaN经历了横向生长的阶段。利用原子力显微镜有数字化记录的特点 ,从形貌的观察中也得到了外延层高度分布 ,发现高度分布可用单峰或多峰高斯分布拟合。通过与形貌特征的对比 ,发现宽而且不对称的分布对应着岛状的外延层形貌 ,可以用多峰高斯分布拟和 ;窄而且对称的分布则对应着比较连续的膜 ,可以用单峰高斯分布拟和。

Morphology of GaN in initial growth stage was observed. It was found that GaN ep ilayer evolved from separate islands to coalesced film. Development of morphol ogy indicated that GaN experienced a lateral growth dominant stage. Histograms o f epilayers height distribution were derived from morphology observation. It w as found that the histograms could be well fitted with multi peak Gaussian dist ribution. The multi peak feature of histograms was interpreted in relation to morphology characteristics.