1[1]Strite S. Lin M E, Morkoc H. Morkoc, Progress and prospects for GaN And Ⅲ-Ⅴ nitride semiconductors [J]. Thin Solid Films, 1993, 231:197-210.
2[2]Nakamura S, Senoh M. Iwasa N et al. High power InGaN single quantum well structure blue and violet light emitting diodes [J]. Appl. Phys. Lett., 1995, 67:1868-1870.
3[3]Fischer P, Christen J, Nakmura S. Spectral electroluminescence mapping of a blue InGaN single quantum well light emitting diode [J]. Jpn. J. Appl. Phys., 2000, 39:L129-L132.
4[4]Mori T, Ohwaki T, Taga Y, et al. Changes in surface composition of GaN by impurity doping [J]. Thin Solid Films,1996, 287: 184-187.
5[5]Chung T B-C, Gershenzon M. Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC [J]. J. Appl. Phys., 1992, 72:651-659.
6[6]Smith M, Chen G D, Li J Z. Excitonic recombination in GaN grown by molecular beam epitaxy [J]. Appl. Phys.Lett., 1995, 67:3387-3389.
7[7]XPS/AES/UPS [M]. Beijing: National Defense Industry Press, 1992, 519-617 (in Chinese).
8[8]Otte K, Lippold G, Hirsch D, et al. XPS and Raman investigation of nitrogen ion etching for depth profiling of CuInSe and CuGaSe [J]. Thin Solid Films, 2000, 361-362:498-503.
9[9]Powell C J. Inelastic interaction of electrons with surface application to Auger-electron spectroscopy and X-ray photoelectron spectroscopy [J]. Surface Science, 1994, 299/300:34-48.
10[10]David R. Penn. Electron mean paths for free-electron-like materials [J]. Phys. Rev., 1976, B13:5248-5254.