GaN基紫外探测器的研究与制备(英文)

GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition

报道了用MOCVD方法在GaAs衬底上制作p GaN/InGaN/n GaN结构紫外探测器。我们对器件进行了测试分析。根据器件光伏信号强度和相位的测量结果 ,我们得到了该器件的能带结构图。我们还发现Ni/Au电极与p GaN之间的接触表现出肖特基接触的特性。该探测器在入射光波长为 375nm处的响应度大约为 7 4× 1 0 -3 A/W。

The fabrication and characteristic of photodetector using p GaN/InGaN/n GaN st ructure grown on GaAs substrate by metalorganic vapor deposition were reported i n this paper.According to the photovoltaic spectrum, the energy band diagra m of the photodetector is given.It is found that the contact of Ni/Au to p GaN shows the characteristic of Schottky barrier.The responsitivity of the photodetector at 375nm is about 7 4×10 -3A/W.