用大面积立式旋转盘MOVPE反应器生长Ⅲ族氮化物材料(英文)

MOVPE Growth of Ⅲ-N Materials with Large Area (21×2″) Vertical Rotating Disk Reactors

为了降低Ⅲ族氮化物材料和器件的成本 ,必须开发大尺寸的Ⅲ族氮化物MOVPE生长的反应器。本文报道了EMCORE公司的一种带有旋转盘的立式反应器 ,其中的衬底片载盘直径为 32 5mm。每次沉积过程中 ,载盘上可以放置 2 1片 2英寸直径的衬底片。反应器的内壁通过水冷 ,其温度可保持在 5 0～ 6 0℃之间。衬底片可用电热丝加热 ,沉积中衬底载盘的旋转速度可达 1 0 0 0～ 1 5 0 0rpm。本文给出了用这种 32 5mmGaN生长系统生长的未掺杂GaN ,InGaN和 p GaN外延层的相关结果。这些结果表明 ,这种旋转盘的反应器是一种很适合大尺寸载盘的系统 ,完全满足Ⅲ族氮化物材料体系生长的要求。与在小反应器中生长的材料相比 ,用这种大反应器生长的材料具有相同的质量。这种 32 5mm的GaN反应器将使制备蓝光和绿光LED所用的Ⅲ族氮化外延材料的生产成本得到显著的降低。

In order to redu ce the cost of Ⅲ N based materials and devices, la rge scale Ⅲ N MOVPE growth reactors must be developed. An EMCORE vertical rot a ting disk reactor (RDR), with a 325mm diameter SiC coated graphite wafer carrier is reported here. The wafer carrier holds two concentric circles of wafers; in total 21×2″ substrates can be loaded at one time for deposition. The interio r su rfaces of the reactor are water cooled, and maintained at temperatures between 5 0～60℃. The wafers are heated by resistive heating, and uses rotating speeds be tween 1 000～1 500 rpm during the deposition. The results of undoped GaN, InGaN and p GaN epitaxial layers grown in the 325mm RDR GaN systems are reported in the paper. These results show that the RDR r eactor technology scales very efficiently to larger disk sizes, even for the cha llenging Ⅲ N material system. The quality of the material grown on the larger reactor is comparable to that grown on the smaller reactors. The 325mm GaN reac tor will result in very significant decreases in production costs for manufactur ing Ⅲ N epitaxial material for blue and green LED applications