生长参数对Si_(1-x)Ge_x∶C合金薄膜中元素分布的影响

Growth Conditions and Stoichiometries of Si_(1-x)Ge_x∶C Alloy Films

用化学气相淀积方法在Si(100)衬底上外延生长Ge组分渐变的Si1-xGex∶C合金薄膜。本文通过能量色散谱仪(EDS)和扫描电子显微镜(SEM)对合金薄膜的元素深度分布和表面形貌进行了表征,分析研究了外延层的生长温度、生长时间对Si1-xGex∶C合金薄膜性质的影响。结果表明,Si1-xGex∶C外延层生长温度和生长时间一定范围内的增加加强了岛与岛之间的合并,促进了衬底Si原子向表面扩散、表面Ge原子向衬底扩散,且生长温度比生长时间对Si、Ge原子互扩散的影响大。

Si1-xGex∶C alloy films with a stoichiometry gradient of Ge were grown by chemical vapor deposition(CVD)on Si(100)substrates.The depth profiles about element distributions and the surface microstructures of the films were characterized with energy dispersive spectroscopy(EDS)and scanning electron microscopy(SEM).The influence of the growth conditions on properties of the films was studied.The results show that the substrate temperature and film growth time,in a certain range,considerably affect the stoichiom...