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Pt插层对NiFe/FeMn薄膜交换耦合的影响 被引量:3

Pt Spacer and Exchange Coupling between NiFe and FeMn Layers
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摘要 采用磁控溅射方法制备了以Pt为缓冲层和保护层的NiFe/FeMn薄膜。在NiFe/FeMn界面插入Pt,发现交换偏置场(Hex)随着插层Pt厚度(tPt)的增加而减小。一个重要的现象是当Pt插层厚度为0.4nm时,在Hex-tPt衰减曲线并非单纯指数下降,而是出现一个"凸起"。通过对样品磁矩随Pt插层厚度的变化规律进行分析,发现随Pt插层厚度的增加,样品的磁矩先逐渐增大,然后又有所下降,并且稳定在某一值;表明在样品制备过程中,NiFe与FeMn之间的相互作用(如界面反应),使得在NiFe/FeMn界面存在磁死层,Pt的插入抑制了NiFe/FeMn界面磁死层的产生,有利于交换耦合;另一方面,Pt的插入隔离了NiFe和FeMn的直接接触,使得FeMn对NiFe的钉扎作用减弱,不利于交换耦合。两个方面的共同作用,使得当Pt插层为某一合适厚度时,Hex-tPt曲线出现"凸起"。 The Pt spacer,inserted between sputtered NiFe and FeMn layers,was deposited by magnetron sputtering.The influence of the Pt spacer in the NiFe/Pt/FeMn system on exchange coupling between NiFe and FeMn layers was studied.The results show that the geometry of the Pt spacer significantly affects the magnetic characteristics of the NiFe/Pt/FeMn system.For example,the exchange bias field(Hex)decreases with an increase of the Pt spacer thickness.Besides,a bump was observed in the non-exponential decay of the Hex-...
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2008年第S1期5-8,共4页 Chinese Journal of Vacuum Science and Technology
基金 国家自然科学基金(No.50471093 50671008) 北京市自然科学基金(No.2052014) 教育部"新世纪优秀人才支持计划"(No.NCET-04-0104)资助课题
关键词 交换耦合 Pt插层 磁死层 Exchange coupling Pt spacer Magnetically dead layer
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  • 1Kagerer B,Binek C,Kleemann W.Freezing field dependence of the exchange bias in uniaxial FeF2/CoPt heterosystems with perpendicular anisotropy,J Magn Magn Mater,2000,217:139-146
  • 2Maat S,Takano K,Parkin S S P,et al.Perpendicular exchange bias of Co/Pt multi-layers,Phys Rev Lett,2001,87(8):087202-1-087202-4
  • 3Garcia F,Moritz J,Ernult F,et al.Exchange bias with perpendicular anisotropy in (Pt/Co)n/FeMn multilayers,IEEE Trans Magn,2002,38(5):2730-2735
  • 4Garcia F,Casali G,Auffret S,et al.Exchange bias in (Pt/Co0.9Fe)N/FeMn multilayers with perpendicular magnetic anisotropy,J Appl Phys,2002,91(10):6905-6907
  • 5Marrows C H.Three-dimensional exchange bias in {Co/Pd}N/FeMn,Phys Rev B,2003,68:012405-1-012405-4
  • 6Liu Z Y,Adenwalla S.Closely linear temperature dependence of exchange bias and coercivity in out-of-plane exchange-bias in {Co/Pd}N/FeMn,J Appl Phys,2003,94(2):1105-1109
  • 7Zeper W B,van Kesteren H W,Jacobs B A J,et al.Hysteresis,microstructure,and magneto-optical recording in Co/Pt and Co/Pd multilayers,J Appl Phys,1991,70:2264-2271
  • 8Kisielewski M,Maziewski A,Tekielak M,et al.Magnetic anisotropy and magnetization reversal processesin Pt/Co/Pt films,J Magn Magn Mater,2003,260:231-243
  • 9Garcia F,Sort J,Rodmacq B,et al.Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers,Appl Phys Lett,2003,83:3537-3539
  • 10Sort J,Garcia F,Rodmacq B,et al.Enhancement of exchange bias through a non-magnetic spacer,J Magn Magn Mater,2004,272-276:355-356

同被引文献22

  • 1裴轶,虞南方,刘奇,刘进.各向异性磁阻传感器的原理及其应用[J].仪表技术与传感器,2004(8):26-27. 被引量:55
  • 2刘俊,郑瑞伦,陈希明,董会宁.Nb含量对纳米级NiFe薄膜ρ和磁电阻的影响[J].重庆大学学报(自然科学版),2004,27(12):98-101. 被引量:3
  • 3陈立凡.纳米氧化层在PtMn基镜面反射Spin Valve磁性薄膜中的作用和结构特征[J].南昌大学学报(理科版),2005,29(3):251-253. 被引量:2
  • 4Dimitrova P, Andreev S, Popova L. Thin film integrated AMR sensor for linear position measurements [J]. Sensors and Actuators A, 2008,147:387-390.
  • 5Ding L, Teng J, Wang X C, et al. Designed synthesis of materials for high-sensitivity geomagnetic sensors [J]. Appl Phys Lett, 2010, 96: 052515.
  • 6Wang S Y, Gao T J, Wang C T, et al. Studies of anisotropic magnetoresistance and magnetic property of Ni81Fe19 ultra-thin films with the lower base vacuum [J]. J Alloys Compds, 2013, 554: 405-407.
  • 7Yu G H, Zhan H C, Li M H, et al. Interface action of Ta/Ni81 Fe19 or Ni81Fe19/Ta and its suppression [J]. Appl Phys Lett, 2002,80(3):455.
  • 8Ding L, Teng J, Zhan Q, et al. Enhancement of the magnetic field sensitivity in A1203 encapsulated NiFe films with anisotropic magnetoresistance [J]. Appl Phys Lett, 2009, 94: 162506.
  • 9Zhao C J, Liu Y, Zhang J Y, et al. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing [J]. Appl Plays Lett, 2012, 101(7): 072404.
  • 10Li M H, Han G, Ding L, et al. A study of the properties and microstructure of Ni81Fe19 ultrathin films with MgO [J]. J Magn Magn Mater, 2012, 324( 1):1-3.

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