摘要
采用Ti靶电弧离子镀与Al靶中频磁控溅射相结合的复合工艺,分别在单晶硅抛光面和高速钢抛光面两种基体上成功地制备了TiAlN薄膜样品。扫描电镜、能谱和X射线衍射分析结果表明,此复合工艺下制备的TiAlN薄膜比TiN薄膜表面液滴尺寸更小,针状孔洞基本消除,组织更为致密均匀。TiAlN薄膜的Al含量(摩尔分数)为0.86%左右,x(Ti)%∶x(N)%约为1∶1,Al的加入使TiN结晶结构发生畸变,晶格常数变小。TiAlN薄膜的硬度比TiN薄膜的硬度有较大的提高,提高了30%左右。
The TiAlN films are deposited on polished face of Si(100) wafer and polished face of high speed steel separately by arc ion plating compounded with intermediate frequency unbalanced magnetron sputtering and the properties of TiAlN films and TiN films which deposited by arc ion plating is also tested and compared. The analysis results of SEM, EDS and XRD indicate: the size of droplets on the surface of TiAlN are smaller than that on the TiN films, the defects are eliminated at a large scale, and the microstr...
出处
《特种铸造及有色合金》
CAS
CSCD
北大核心
2008年第S1期274-277,共4页
Special Casting & Nonferrous Alloys
基金
福建省教育厅A类科技项目基金资助(编号JA07205)
关键词
中频磁控溅射
电弧离子镀
TIALN薄膜
TIN薄膜
intermediate frequency unbalanced magnetron sputtering
arc ion plating
TiAlN films
TiN films
