摘要
含Ⅲ族与Ⅴ族元素掺杂的金刚石是宽禁带的半导体材料,同时具有优异的物理和化学特性,在电子器件与光电子器件方面的应用具有极大潜力,成为近几年来国内外研究的热点之一。介绍了目前常用的掺杂方法、技术水平及金刚石半导体的应用前景。
Diamond doped with Ⅲ or Ⅴ subgroup elements is a kind of wide-bandgap semiconductor with superior physical and chemical properties. Due to its exceptional properties, semi-conducting diamond has promising good potentitil in electronic and optoelectronic devices. The current status and technology of diamond doping (including CVD method and ion implantation) were reviewed and the prospect of diamond semiconductor was presented.
出处
《真空与低温》
2008年第3期134-139,171,共7页
Vacuum and Cryogenics
基金
湖北省教育厅Q20081505项目的资助
武汉工程大学绿色化工过程省部共建教育部重点实验室开放基金RGCT200801的资助。
关键词
金刚石薄膜
掺杂
半导体
N型
P型
diamond film
doping
semiconductor
N-type
P-type
