摘要
天线效应(PAE)是超深亚微米IC设计后端设计流程中的一个关键问题。该文具体分析了在芯片制造过程中产生天线效应的原因和影响因素,根据其产生机理提出了四种消除天线效应的方法,同时还给出了设计中的天线规则和天线比率的具体计算方法。在真实的设计实例中,运用该方法解决了设计中存在的天线效应问题,证明了它的切实可行性。
Process antenna effect is a key challenge in backend design flow of very deep submicron (VDSM) IC design. The affection factors and causations generating process antenna effect (PAE) in the IC fabrication process are analyzed. Four elimination methods of PAE are applied in VDSM IC design. The calculation method of antenna ratio is deduced. The feasibility of these methods are proved in design.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2008年第S1期113-117,共5页
Journal of University of Electronic Science and Technology of China
关键词
天线规则
栅氧
天线效应
超深亚微米
antenna roe
gate-oxide
process antenna effect
very deep submicron
