摘要
采用CMOS工艺设计了一种零温度系数的带隙基准与零温度系数欠压闭锁(UVLO)的复用电路。由于这种复用,使其与传统的采用BiCMOS或CMOS工艺设计的电路相比,工艺成本低,易于实现。电路由通过改进的带隙结构产生零温度系数的基准电压,并同时检测输入电压,产生对温度和工艺不敏感的输入电压检测信号跳变阈值,实现欠压闭锁。同时通过反馈实现迟滞,克服了单一阈值的弱抗干扰能力。
This paper proposes a voltage reference based on standard CMOS process. The reference voltage with zero temperature coefficient is generated by the modified band-gap structure. By monitoring the input voltage, the reference generates a precise UVLO signal whose threshold voltage has little dependence to the temperature and technology change. Additionally, the hysteresis is realized by using a feedback circuit.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2008年第S1期118-121,共4页
Journal of University of Electronic Science and Technology of China
关键词
带隙基准
CMOS工艺
温度系数
欠压闭锁
band-gap voltage reference
CMOS process
temperature coefficients
UVLO