晶体生长用石英玻璃管镀膜工艺的正交实验研究

Orthogonal Optimum Design of Carbon Coating on Quartz Ampoules for Crystal Growth

运用正交设计,对CdZnTe晶体生长用高纯石英坩埚内壁镀膜过程中的镀膜温度、镀膜时间、气体流量、冷却时间四个因素进行了研究和优化。用金相显微镜,扫描电镜观察分析了不同镀膜工艺条件下得到的碳膜表面形貌,用WS-2005自动划痕仪对碳膜与石英管壁之间的结合力进行了测试。实验结果表明,镀膜温度对碳膜质量影响最为显著,其次是镀膜时间,再次为冷却时间,而气体流量对碳膜质量的影响甚小。镀膜工艺的优化参数:镀膜温度为1010℃,气体流量为6 L/h,镀膜时间为4 h,冷却时间为18 h。该工艺参数得到的碳膜较为均匀,且与石英管壁结合强度高。

In the process of the high purity quartz crucible wall carbon coating for CdZnTe crystal growth,the factors affecting the carbon film quality,the coating temperature,the coating time,the gas flux,and the cooling time,were studied and optimized using orthogonal design method.The carbon film surfaces were observed by metalloscope and scanning electron microscope(SEM).The binding force between the carbon film and the quartz tube were measured with the WS-2005 automatic scratch instrument.The experimental resul...